kw.\*:("B3. Heterojunction bipolar transistors")
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Molecular beam epitaxy in a high-volume GaAs fabROGERS, T. J.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1671-1675, issn 0022-0248, 5 p.Conference Paper
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applicationsYAREKHA, D. A; GODEY, S; WALLART, X et al.Journal of crystal growth. 2007, Vol 301-302, pp 217-220, issn 0022-0248, 4 p.Conference Paper
Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device applicationHSIEH, Y. C; CHANG, E. Y; YEH, S. S et al.Journal of crystal growth. 2006, Vol 289, Num 1, pp 96-101, issn 0022-0248, 6 p.Article
X-ray characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sourcesVELLING, P; KEIPER, D; BRENNEMANN, A et al.Journal of crystal growth. 2003, Vol 248, pp 139-143, issn 0022-0248, 5 p.Conference Paper
Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistorsANHUAI XU; MING QI; FUYING ZHU et al.Journal of crystal growth. 2007, Vol 301-302, pp 212-216, issn 0022-0248, 5 p.Conference Paper